SiC photodiodes
SiC photodiodes

SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current,high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors.

W SiC diodes are included in all common TO (Transistor Outline) packages from TO18/TO46 over TO5/TO39 and TO8 up to size TO3. The packages offer hermetic tightness and resistance to solvents and radiation. As a result, an application to a variety of components is possible.


Key features

◆ Very low dark current (fA-range)

◆ Very high UV responsibility in the range of 200 - 400nm (sunblind)

◆ Hermetically sealed TO-package

◆ Proven outstanding long term stability under high dosis of UV-C-radiation (up to 1000 Wm-2)

◆ Excellent temperature stability (temperature coefficient Tk < 0,06%/K), operating temperature up to +150°C

◆ Special high - and low temperature versions on request